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Enhanced Anisotropic Thermoelectric Properties in GeBi2Se4-Based Single Crystals
Shaoqin Wang1, Chunying Pang2, Qingqiao Fu1
1School of Materials Science and Engineering, Shanghai University, Shanghai, China.
Small (Weinheim an Der Bergstrasse, Germany)
|April 20, 2026
Summary
High-quality single crystals of layered GeBi2Se4 show enhanced thermoelectric performance along the c-axis. Te alloying and Bi doping boost the thermoelectric figure of merit (zT) to 0.9, improving efficiency.
Area of Science:
- Materials Science
- Solid State Physics
- Inorganic Chemistry
Background:
- Layered GeBi2Se4 possesses anisotropic thermoelectric properties.
- Low density of states effective mass limits the Seebeck coefficient in pristine GeBi2Se4.
Purpose of the Study:
- To enhance the thermoelectric performance of GeBi2Se4 by leveraging its structural anisotropy.
- To investigate the effects of Te alloying and Bi doping on thermoelectric properties.
Main Methods:
- Growth of high-quality single crystals of GeBi2Se4.
- Te alloying at the Se site and Bi doping to optimize carrier concentration.
- Measurement of thermoelectric properties along the c-axis and ab-plane.
Main Results:
- Superior thermoelectric performance was achieved along the c-axis compared to the ab-plane.
- Te alloying induced band convergence, increasing the density of states effective mass.
- Synergistic effects of alloying and doping resulted in a peak zT of ~0.9 at 675 K in n-type Ge0.92Bi2.08Se2.4Te1.6 single crystals.
- This represents a significant enhancement over pristine materials.
Conclusions:
- Engineering anisotropy in single-crystal IV-V-VI chalcogenides is a promising strategy for high-performance thermoelectrics.
- The developed material demonstrates potential for efficient thermoelectric energy conversion.
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