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Updated: Apr 22, 2026

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Atomic Structure and Symmetry-Dependent Band Structure of the Novel Spinel Phase AgIn2Se4
Hongzheng Wang1, Xiaoyu Fei2, Wei Yu3
1State Key Laboratory of Optoelectronic Information Acquisition and Protection Technology, Leibniz International Joint Research Center of Materials Sciences of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Abstract:
Band structure fundamentally governs the functionality of solid-state materials. However, precise control without disrupting crystal symmetry remains challenging. Herein, we demonstrate symmetry-driven band-structure engineering in the Ag-In-Se system by phase manipulation under high-temperature and high-pressure conditions. A previously unreported spinel-type cubic AgIn2Se4 phase is synthesized and resolved by advanced electron microscopy, exhibiting a well-defined semiconducting band structure with an enlarged band gap and an upshifted position of the conduction band compared to rhombohedral and tetragonal phases. These phenomena originate from a reconstruction of the In-Se coordination environment from tetrahedral to octahedral geometry and enhanced In 5s-Se 4p orbital hybridization for promoting electron localization, thereby shifting the band edges. Our work gives an insightful understanding of symmetry-dependent band structures, affording phase-engineered symmetry control as a general strategy for band-structure optimization in optoelectronic materials with fixed composition.
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