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Published on: December 3, 2013
A quantum kinetic theory of photon Bose-Einstein condensation in semiconductors
José Luís Figueiredo1,2, Ross Schofield2, Ming Fu2
1GoLP-Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1, 1049-001 Lisboa, Portugal.
Abstract:
Photon condensation in semiconductor microcavities is a transformative technique for engineering quantum states of light at room temperature by tailoring strong but incoherent light-matter interactions. While continuous-wave and electrical pumping offer exceptional prospects for miniaturized quantum photonic technologies, harnessing these requires conceptual advances in understanding non-equilibrium light-matter dynamics in semiconductors. We resolve this challenge through anab initioquantum kinetic theory capturing how Coulomb interactions of optically excited carriers and phonon scattering mediate photon thermalization and condensation in semiconductors. Our microscopic model shows that at high carrier densities, thermalization is dominated by carrier-carrier Coulomb scattering, in clear contrast to the rovibrational relaxation that governs dye-based photon condensates. The theory predicts a rich nonequilibrium phase diagram with thermal, Bose-condensed, multimode, and lasing phases, quantitatively in agreement with recent experiments. Crucially, we identify how cavity detuning controls transitions between equilibrium and gain-dominated regimes, enabling tailored design of coherent light sources. This work thus provides the foundation for semiconductor-based quantum photonic devices operating beyond conventional laser paradigms.
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