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Partial Sigma Covalent Bonding in Transition Metals
Lam H Nguyen1, Thanh N Truong1
1Department of Chemistry, University of Utah, Salt Lake City, Utah, USA.
None:
This work establishes partial σ-covalent bonding as a general electronic phenomenon extending from main-group biradicals to d8-d8 transition-metal systems (Co(I), Rh(I), Ir(I)). Using dispersion-corrected DFT (B3LYP-D3/def2-TZVP for transition metals and 6-31+G(d) for other elements) in combination with Wiberg bond index and frontier molecular orbital analyses, we show that partial σ-bonding is strongly governed by ligand field and orbital symmetry. While shorter metal-metal distances correlate with larger bond orders, singlet-triplet energetic differences arise from competition between ligand-field splitting and exchange energy and spin-orbit coupling. Compared to isolated metal-metal ion dimers at the same distance, both ligand types in the study modify not only the orbital characters but also the frontier orbital energy levels. Strong field C-donor ligands significantly widen the HOMO-LUMO gap while changing orbital ordering so that the HOMO has dz 2-dz 2 antibonding character and the LUMO has a bonding pz-pz orbital. Consequently, it leads to triplet-dominant metal-metal bonding, (WBOTriplet = 0.4; dM-M = 2.9 Å). In contrast, N-donor lantern organic frameworks (LOFs) narrow the HOMO-LUMO gap while alternating orbital ordering so that the HOMO becomes the ligand-based bonding π-orbital and the LUMO corresponds to a dz 2-dz 2 antibonding orbital, thereby enabling substantial σ-bonding in both spin states (WBOTriplet = 0.3 with dM-M = 3.1 Å; and WBOSinglet = 0.7 with dM-M = 2.7 Å). More importantly, N-donor LOF environments significantly reduce the HOMO-LUMO gap up to 2.00 eV relative to comparable conventional systems, suggests a viable strategy for band gap engineering at the single-unit-cell level, without requiring infinite stacking.
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