Oxygen Vacancy-Mediated Electron Sinking Reprograms Interfacial Charge Flow in MgFe2O4/NaNbO3 Heterojunctions for the
Xingnong Wu1, Yishuo Zhang1,2, Jingyi Sun1
1Jiangxi Engineering Technology Research Center of Nuclear Radiation Detection and Application, East China University of Technology, Nanchang, Jiangxi 330013, China.
Abstract:
Photocatalytic reduction of uranyl ion (UO22+, referred to as U(VI)) is hindered in complex aqueous environments by rapid charge recombination and the instability of radical-based reductive species. Herein, we demonstrate an oxygen vacancy-mediated electron-sinking mechanism that reprograms interfacial charge flow in MgFe2O4/NaNbO3 (MFO/NNO) heterojunctions, enabling efficient and selective photoreduction of U(VI). In this S-scheme heterojunction, photogenerated electrons are directionally transferred across the interface and continuously drained by molecular oxygen at oxygen vacancy-associated sites, where O2 is consumed through nonradical electron dissipation rather than reactive oxygen species formation. This O2-regulated electron sinking suppresses interfacial recombination, lowers the electron quasi-Fermi level, and kinetically promotes stepwise uranyl reduction to insoluble U(IV) via direct electron transfer. As a result, the MFO/NNO heterojunction achieves a U(VI) reduction efficiency of 97.36% in real low-concentration U(VI) tailings wastewater under natural light. Density functional theory reveals that oxygen vacancies and Fe-O redox coupling synergistically reduce interfacial electron transfer barriers and stabilize oxygen adsorption. This work establishes O2 as a nonradical electron sink for charge-flow reprogramming, offering a general strategy for suppression-type photocatalysis in complex wastewater remediation.


