Breaking the Boltzmann limit in sub-5 nm monolayer CdPS₃ transistors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanoelectronics

Background:

• Conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) are limited by the 60 mV dec^-1 Boltzmann limit.
• Tunnel field-effect transistors (TFETs) offer a potential solution to overcome this fundamental limitation.
• Advanced semiconductor materials are crucial for developing next-generation logic devices.

Purpose of the Study:

• Investigate the potential of monolayer CdPS3 (ML CdPS3) for sub-5 nm logic devices.
• Examine the anisotropic quantum transport properties of ML CdPS3.
• Determine the suitability of ML CdPS3 for high-performance nanoelectronics.

Main Methods:

• Utilized first-principle quantum transport simulations.
• Analyzed the electronic and transport properties of ML CdPS3.
• Simulated device performance for MOSFETs with varying gate lengths.

Main Results:

• ML CdPS3 MOSFETs oriented along the zigzag direction demonstrate tunneling-dominated transport.
• Achieved an ultrasteep minimum subthreshold swing (SS) of 37.8 mV dec^-1.
• Devices with a 3 nm gate length meet International Roadmap for Devices and Systems (IRDS) high-performance standards.

Conclusions:

• ML CdPS3 exhibits excellent potential for sub-5 nm logic devices.
• The anisotropic properties of ML CdPS3 are key to its superior performance.
• ML CdPS3 is a strong candidate for next-generation high-performance nanoelectronics.