Ballistic transport in sub-10 nm monolayer InAs transistors for high-performance applications

Area of Science:

• Materials Science
• Condensed Matter Physics
• Semiconductor Physics

Background:

• Indium arsenide (InAs) is a 2D semiconductor with high electron mobility, promising for advanced electronic and optical devices.
• Recent advancements have enabled the preparation of 2D InAs with thicknesses as low as 4.8 nm.

Purpose of the Study:

• To investigate the ballistic transport characteristics of sub-10 nm monolayer InAs (InAsH2) metal-oxide-semiconductor field-effect transistors (MOSFETs).
• To evaluate the performance metrics including on-state current, subthreshold swing, intrinsic delay time, and power consumption.

Main Methods:

• Utilized *ab initio* quantum transport simulations.
• Systematically analyzed the impact of doping concentration, underlap, and high-κ dielectric effects.

Main Results:

• Monolayer InAsH2 MOSFETs demonstrate excellent performance, meeting International Technology Roadmap for Semiconductors (ITRS) requirements for gate lengths down to 4.0 nm.
• Optimized doping and underlap significantly enhance device performance.
• The integration of high-κ dielectrics further improves on-state current and subthreshold swing.

Conclusions:

• Monolayer InAsH2 is a highly promising channel material for next-generation high-performance semiconductor devices.
• The study provides critical insights into optimizing 2D InAs MOSFETs for future electronic applications.