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Electromagnetically Induced Transparency-like Effect in U-Shaped Silicon Metasurfaces and Gap-Mode-Enhanced

Guangyue Shi1, Ou Zhang1, Changliang Li1

  • 1School of Materials Science and Engineering, Nankai University, Tianjin 300350, China.

Sensors (Basel, Switzerland)
|May 4, 2026
PubMed
Summary

Silicon metasurfaces exhibit electromagnetically induced transparency-like effects for enhanced optical sensing. A novel U-shaped design with gap modes significantly boosts sensing capabilities, increasing the figure of merit.

Keywords:
electromagnetically induced transparencynear-field enhancementrefractive index sensingsilicon metasurfaces

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Area of Science:

  • Photonics and Nanotechnology
  • Metasurface Optics
  • Optical Sensing

Background:

  • Electromagnetically induced transparency (EIT)-like effects in silicon metasurfaces are crucial for manipulating optical resonances.
  • These effects offer potential for improving sensing performance.

Purpose of the Study:

  • To propose and investigate a U-shaped silicon metasurface with gap modes for enhanced sensing.
  • To explore the coupling between bright and dark modes for EIT-like effects.

Main Methods:

  • Design of a U-shaped silicon metasurface comprising horizontal and vertical nanopillars.
  • Introduction of nanoscale gaps to form a gap mode, enhancing near-field coupling.
  • Fabrication and experimental measurement of transmission spectra, compared with numerical simulations.

Main Results:

  • The U-shaped metasurface with gap modes exhibits a pronounced EIT-like effect.
  • Near-field enhancement and reduced radiative losses improve the quality factor of the resonance.
  • Numerical investigation shows a significant enhancement in refractive index sensing, increasing the figure of merit from 6 to 60 RIU-1.

Conclusions:

  • The proposed UG metasurface design is a promising strategy for high-performance optical sensing.
  • The gap-mode mechanism effectively enhances near-field interactions and sensing capabilities.
  • This work provides insights into manipulating electromagnetic responses in silicon metasurfaces.