Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum...

Targeting high-performance and high-density application scenarios, this work systematically investigates the performance limits of ultrashort-channel double-gate (DG) MOSFETs based on halogenated borophene within a density functional theory (DFT)-nonequilibrium Green's function (NEGF) quantum transport simulation framework. Key device metrics such as on-current, subthreshold swing, switching delay, and power consumption are analyzed for both n-type and p-type devices under various gate and underlap lengths. The optimal channel material selection and underlap length configuration are explored. Using B₄Cl₄ and B₄Br₄ as channel materials for nMOSFET and pMOSFET, respectively, significantly improves the subthreshold performance, ON-OFF ratio, and energy-delay product. Furthermore, selecting appropriate underlap lengths for different gate lengths enables further device performance optimization. These findings provide a crucial theoretical foundation for the material and structural design and optimization of ultrascaled two-dimensional semiconductor transistors in the post-Moore era.