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Updated: May 7, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
A synthetic method for preparing double channelling materials, and an operational mechanism for selective p- and
Myung Sik Choi1, Han Gil Na2, Jeong Yun Hwang3
1Department of Nano & Advanced Materials Science and Engineering, Kyungpook National University, Sangju, Republic of Korea.
Abstract:
A new synthetic strategy and associated mechanism have been developed, in which two carrier conduction channels of n- and p-type semiconductors on the surface of one material are automatically and advantageously selected during surface reactivity. The key step is to uniformly channel non-equilibrium metal oxides of CuOx and SnOx throughout the sample by applying a flame chemical vapour deposition technique for 5 s. Unlike the original SnO2 semiconductor and Cu metal, the resulting material possessed intermediate physicochemical properties. It has been demonstrated that an oxidising gas, NO2, and reducing gas, H2S, can be alternately adsorbed, which was facilitated by the automatic selection of p- or n-type channels. This solid-solution sensing method utilizing non-equilibrium compositions can be employed in other applications involving semiconducting metal oxide gas sensing, even at low temperatures.

