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Tailoring Local-Global Structures via Hot Deformation for High-Performance BiSbSe3 Thermoelectrics.
Xiaowei Shi1, Saichao Cao2, Yu Yan1
1Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China.
This study enhances thermoelectric materials by combining composite engineering and hot deformation to optimize carrier concentration and mobility. This approach significantly boosts thermoelectric performance (ZT) and hardness, paving the way for commercialization.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Improving thermoelectric (TE) materials often involves increasing carrier concentration (n), but this typically reduces carrier mobility (μ), creating a trade-off.
- Existing methods struggle to simultaneously optimize both n and μ, limiting the performance of high-performance TE materials like BiSbSe₃.
- A need exists for novel processing strategies to overcome the n-μ trade-off in TE materials.
Purpose of the Study:
- To synergistically optimize both carrier concentration (n) and carrier mobility (μ) in BiSbSe₃.
- To investigate the effects of combining composite engineering and hot deformation processing on the microstructure and thermoelectric properties of BiSbSe₃.
- To achieve a significant enhancement in the thermoelectric figure of merit (ZT) and mechanical properties.
Main Methods:
- Employed a synergistic approach integrating composite engineering (BiSbSe₃ + CuI + Cu) and hot deformation processing.
- Conducted microstructural analysis to study texture formation, recrystallization, secondary phase precipitation (CuSbSe₂), and atomic ordering.
- Measured thermoelectric properties, including electrical conductivity, power factor, lattice thermal conductivity, and Vickers hardness.
Main Results:
- The dual processing route induced significant microstructural evolution, including texture, dynamic recrystallization, Cu-rich phase precipitation, and enhanced short-range ordering.
- Optimized carrier concentration and tailored transport pathways led to substantially enhanced electrical conductivity and power factor.
- A multiscale phonon scattering network, formed by interstitial atoms, dislocations, and interfaces, effectively reduced lattice thermal conductivity.
- Achieved a peak ZT value of ~1.3 at 723 K, a significant increase from ~0.06 for pristine BiSbSe₃, surpassing previously reported values.
- Concurrent improvement in Vickers hardness was observed in the modified samples.
Conclusions:
- Hot deformation processing synergistically regulates thermoelectric properties by tailoring local-global structural modifications in BiSbSe₃.
- The combined strategy effectively overcomes the carrier concentration-mobility trade-off, leading to superior thermoelectric performance.
- This work provides a robust foundation for the commercialization of high-performance thermoelectric materials through advanced processing techniques.
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