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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

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Related Experiment Video

Updated: May 10, 2026

Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

Stress-to-Light Conversion in an Earth-Abundant Oxide Semiconductor.

Tomoki Uchiyama1,2, Koki Otonari2, Reona Omori2

  • 1Department of Material Science and Engineering, Faculty of Engineering, Tohoku University, Sendai, Miyagi, Japan.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|May 8, 2026
PubMed
Summary

Sustainable zinc oxide (ZnO) now emits near-infrared (NIR) light under stress. Defect engineering creates a p-type state, enabling stress-driven light emission for new photonic applications.

Keywords:
rare‐earth‐freeself‐powered photonicsstress‐to‐light conversionzinc oxide

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Area of Science:

  • Solid-state physics
  • Materials science
  • Photonics

Background:

  • Stress-to-light conversion is a key photonic function.
  • Zinc oxide (ZnO) is earth-abundant, sustainable, and has favorable semiconductor properties.
  • Realizing this function in simple, sustainable materials remains a challenge.

Purpose of the Study:

  • To demonstrate stress-induced near-infrared (NIR) luminescence in defect-engineered zinc oxide (ZnO).
  • To overcome the intrinsic n-type conductivity of ZnO for photonic applications.
  • To explore coupled electronic and structural effects for novel light-emitting functionalities.

Main Methods:

  • Defect engineering of ZnO by partial substitution of Zn2+ with Li+ or Na+ to stabilize a p-type state.
  • Characterization of stress-induced NIR luminescence.
  • Investigation of ferroelectric properties linked to electronic and structural changes.

Main Results:

  • Demonstrated strong NIR luminescence in defect-engineered ZnO under elastic stress.
  • Achieved a stable p-type ZnO, overcoming its native n-type character.
  • Observed coupled electronic and structural effects, including ferroelectricity, enabling stress-driven light emission.

Conclusions:

  • Established a novel, sustainable, rare-earth-free platform for NIR photonics using defect-engineered ZnO.
  • Highlighted a previously unrecognized light-emitting function in a simple oxide lattice.
  • Opened scalable opportunities for self-powered biophotonic signaling and infrastructure health monitoring.