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Updated: May 13, 2026

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Published on: April 19, 2021
Thermodynamic Control of Interface Directs MnO2 Nucleation Chemistry for Dense and Conformal Electrodeposition
Xinzhe Xue1, Swetha Chandrasekaran2, Jean-Baptiste Forien2
1Department of Chemistry and Biochemistry, University of California, 1156 High Street, Santa Cruz, California 95064, United States.
Abstract:
Manganese dioxide (MnO2) is widely recognized as a promising material for high-energy-density energy storage systems due to its broad applicability and facile electrodeposition. However, achieving uniform, thin, and high-mass-loading MnO2 coatings on high-surface-area electrodes remains a significant challenge. Conventional electrodeposition methods typically yield nonuniform, thick layers with poor conductivity and limited material utilization, restricting their practical use. Here, we uncover a thermodynamically engineered vanadyl/pervanadyl (VO2+/VO2+) interface that fundamentally reshapes MnO2 electrodeposition chemistry, enabling highly uniform and dense coatings. Combining in situ AFM measurement, Classical Nucleation Theory, and Johnson-Mehl-Avrami-Kolmogorov modeling, we show that this interface reduces early-stage detectable MnO2 island size by 35-fold and shifts the MnO2 growth from diffusion-limited to reaction-limited progressive nucleation. This thermodynamically controlled interface yields highly dense and conformal MnO2 films with record-high mass loading of 241 mg cm-2 (1607 mg cm-3) on 3D-printed graphene aerogels, without compromising porosity or inducing thickness gradient. As a prototype demonstration, the resulting MnO2 electrodes deliver record-setting volumetric performance in both capacitors (106 F cm-3) and Zn//MnO2 pouch cells (162 mAh cm-3). Beyond energy storage, our findings demonstrate the significance of thermodynamic interface control in MnO2 nucleation chemistry for achieving dense and uniform coatings on various substrates, with implications for electrocatalysis, semiconductor processing, and advanced materials manufacturing.
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