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Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Related Experiment Video

Updated: May 14, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures.

Maxim Moscotin¹, Justinas Jorudas¹, Pawel Prystawko²

¹Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), LT-10257 Vilnius, Lithuania.

Sensors (Basel, Switzerland)

|May 13, 2026

Summary

We developed a novel terahertz (THz) detector using a modified EdgeFET (m-EdgeFET) on AlGaN/GaN HEMTs. This hybrid design offers enhanced responsivity and reduced gate leakage for efficient THz detection.

Keywords:

AlGaN/GaN HEMT GaN terahertz devices TeraFET antenna-coupled FET modified EdgeFET plasma-wave rectification terahertz detection

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Last Updated: May 14, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Published on: November 24, 2016

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Published on: October 23, 2018

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Area of Science:

Terahertz (THz) technology
Semiconductor device physics
High-frequency electronics

Background:

Terahertz (THz) radiation detection is crucial for various applications.
Existing detectors often face limitations in sensitivity, speed, or operating conditions.
Advanced transistor designs are needed to improve THz detection capabilities.

Purpose of the Study:

To propose and investigate a novel antenna-coupled wire-channel field-effect transistor-modified EdgeFET (m-EdgeFET) for THz detection.
To evaluate the performance of the m-EdgeFET on AlGaN/GaN high-electron-mobility transistor (HEMT) structures.
To analyze the device's responsivity, gate leakage current, and operating regimes.

Main Methods:

Fabrication of the proposed m-EdgeFET on AlGaN/GaN HEMT structures.
Characterization of the device's response to 150 GHz and 300 GHz radiation at room temperature.
Analysis of responsivity dependence on channel length and gate voltage.
Investigation of device operation in source-drain (SD) and gate coupling (GG) regimes.

Main Results:

The m-EdgeFET demonstrated distinct response characteristics under THz radiation.
Peak responsivity reached 6.5 V/W at -3 V gate voltage, with significantly lower gate bias required compared to conventional EdgeFET.
Gate leakage current was reduced by an order of magnitude (~1 nA) compared to similar FinFETs.
The device operated effectively in both SD and GG coupling regimes.

Conclusions:

The proposed m-EdgeFET design offers a promising solution for efficient and electrically controlled THz detection.
The hybrid architecture combines advantages of FinFET and EdgeFET concepts for superior performance.
The device exhibits high responsivity and low leakage current, suitable for fast THz sensing applications.