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Comparison of Kinetic and Fluid Simulation Models for RF Capacitively Coupled Plasmas in Semiconductor Processing
Hwanho Kim1,2, Min Uk Lee3, Hae June Lee1
1Department of Electrical Engineering, Pusan National University, Busan 46241, Republic of Korea.
Materials (Basel, Switzerland)
|May 13, 2026
Summary
This study compares kinetic and fluid simulations for low-temperature plasmas (LTPs) in radio frequency capacitively coupled plasma (RF-CCP) systems. Fluid models are less accurate for asymmetric structures due to non-Maxwellian electron kinetics and ion pressure tensor dominance.
Area of Science:
- Plasma Physics
- Materials Science
- Microelectronics Engineering
Background:
- Low-temperature plasmas (LTPs) are crucial for microelectronics materials processing.
- Accurate spatiotemporal analysis of plasma parameters in radio frequency capacitively coupled plasma (RF-CCP) systems is challenging.
- Multidimensional numerical simulations are necessary for understanding these complex systems.
Purpose of the Study:
- To determine the effectiveness of kinetic versus fluid simulations for low-pressure CCPs.
- To investigate the role of energy-dependent electron kinetics in LTPs.
- To compare symmetric and asymmetric electrode structures in RF-CCP systems.
Main Methods:
- Comparison of particle-in-cell (PIC) simulations with a two-dimensional (2D) fluid model.
- Analysis of particle energy distributions and non-Maxwellian electron kinetics.
- Assessment of standard fluid approximations like drift-diffusion and isotropic pressure.
Main Results:
- Kinetic simulations are essential for accurately capturing non-Maxwellian electron energy distributions in LTPs.
- Standard fluid approximations, including isotropic pressure, are often insufficient.
- The ion pressure tensor significantly influences sheath behavior, particularly in asymmetric electrode configurations.
Conclusions:
- Kinetic simulations are more reliable for detailed analysis of LTPs in RF-CCP systems, especially under asymmetric conditions.
- Fluid models require careful validation against kinetic data for accurate predictions.
- Understanding kinetic effects is vital for optimizing microelectronics processing using plasmas.
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