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Updated: May 15, 2026

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
Published on: October 5, 2013
Crystallographic orientation-dependent magnetotransport in the layered antiferromagnet-CrSBr
Naresh Shyaga1, Pankaj Bhardwaj1, Rajib Sarkar1
1Centre for Nanoscience and Engineering, Indian Institute of Science, Bengaluru 560012, Karnataka, India.
Abstract:
Among two-dimensional magnetic materials, Chromium sulphide bromide (CrSBr) has attracted considerable attention owing to its coexistence of ferromagnetic (FM) and antiferromagnetic ordering, which depends sensitively on crystallographic orientation. An additional distinguishing feature of CrSBr is its highly anisotropic Fermi surface in momentum space. In this work, we present a comprehensive investigation of magnetoresistance (MR) by systematically orienting the bias current and the applied magnetic field along all three crystallographic axes. We demonstrate that the MR serves as a direct probe of electronic anisotropy, exhibiting pronounced variations when the current is applied along different crystallographic directions under a magnetic field perpendicular to the sample plane. For in-plane magnetic fields, we observe conventional anisotropic MR accompanied by hysteresis, indicative of FM behaviour. Overall, our study provides a complete picture of electronic transport in CrSBr as a function of bias current and magnetic field orientation with respect to crystallographic directions, thereby opening pathways for future experiments requiring high sensitivity of electrical resistance to magnetic field gradients.
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