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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Enhancing Interfacial Stability and Mechanical Strength of a CoSb<sub>3</sub>-Based Thermoelectric Junction Using Ti-Based Alloy Barrier Layers.

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Related Experiment Video

Updated: May 16, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Enhancing Interfacial Stability of GeTe-Based Thermoelectric Junction Using an Amorphous Al-Ni-Ti Diffusion Barrier.

Junjie Wang1, Zhan Sun1, Yansong Dong1

  • 1State Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin 150001, China.

ACS Applied Materials & Interfaces
|May 14, 2026
PubMed
Summary

Amorphous Al-Ni-Ti alloys serve as effective diffusion barriers for GeTe-based thermoelectric materials, enhancing stability and reducing interfacial reactions with copper electrodes for improved device longevity.

Keywords:
Al–Ni–TiGeTeamorphous alloydiffusion barrierthermal stabilitythermoelectric

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

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Last Updated: May 16, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

  • Materials Science
  • Solid State Physics
  • Energy Conversion

Background:

  • Germanium Telluride (GeTe)-based materials are crucial for midtemperature thermoelectric applications.
  • High reactivity between GeTe and common electrodes like copper limits device stability.
  • Effective diffusion barriers are essential to mitigate interfacial reactions and ensure long-term performance.

Purpose of the Study:

  • To investigate amorphous Al-Ni-Ti alloys as diffusion barriers between GeTe and copper electrodes.
  • To evaluate the thermodynamic compatibility and thermal expansion matching of potential barrier materials.
  • To assess the interfacial stability and mechanical properties of the fabricated thermoelectric joints.

Main Methods:

  • Element screening based on thermodynamic compatibility and coefficient of thermal expansion (CTE) matching.
  • Fabrication of GeTe/barrier/Cu joints using a one-step hot pressing method.
  • High-temperature aging tests at 773 K for 216 hours.
  • Interfacial characterization using techniques like SEM/EDX and XRD.
  • Measurement of interfacial contact resistivity and shear strength.

Main Results:

  • Amorphous Al60Ni10Ti30 demonstrated superior stability as a diffusion barrier compared to crystalline counterparts.
  • The amorphous barrier significantly reduced reaction layer thickness (by ~60%) and maintained lower interfacial contact resistivity.
  • Fabricated joints exhibited a shear strength of 13 MPa, with fracture occurring within the GeTe matrix.
  • Well-bonded interfaces were observed between GeTe, the amorphous barrier, and Cu electrodes.

Conclusions:

  • Amorphous Al60Ni10Ti30 is a reliable and stable diffusion barrier for GeTe-based thermoelectric devices.
  • This barrier material effectively suppresses interfacial reactions and enhances mechanical integrity.
  • The findings offer a promising solution for improving the operational stability of midtemperature thermoelectric modules.