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Related Concept Videos

Adsorption Isotherms II01:25

Adsorption Isotherms II

Brunauer, Emmett, and Teller (BET) introduced a theory in 1938 that modified Langmuir's assumptions to explain multilayer physical adsorption. This theory is applicable to Type II isotherms and provides a more realistic picture of adsorption processes. The BET theory assumes a uniform solid surface with localized adsorption sites, where adsorption at one site doesn't affect adsorption at neighboring sites. This theory also allows for the possibility of additional molecules being adsorbed on top...
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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The temperature-composition phase diagram of two solids, A and B, which are immiscible in the solid phase but form miscible liquids, shows that when the temperature is low, these two exist as separate, pure solids (A and B). As the temperature increases, they transition into a single-phase liquid solution where A and B coexist. Moving from point a1 to a2 in the phase diagram, the composition changes such that solid B begins to separate from the solution, enriching the remaining liquid with A.

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Updated: May 16, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
08:58

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Published on: December 21, 2015

Near-zero Poisson's ratio monolayer bismuthene.

Lingling Bai1, Runqing Zhang2, Huafeng Dong3

  • 1School of Electronics and Electrical Engineering, Zhaoqing University, Zhaoqing 526061, China.

Physical Chemistry Chemical Physics : PCCP
|May 14, 2026
PubMed
Summary

Monolayer P2/m bismuthene exhibits unique mechanical anisotropy and a tunable electronic structure. This rare 2D material shows potential for flexible optoelectronics due to its strain-induced band gap changes.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Materials Science

Background:

  • Two-dimensional (2D) materials offer unique properties for advanced applications.
  • Mechanical and electronic properties of 2D materials are crucial for device design.
  • Bismuthene is an emerging 2D material with potential for novel functionalities.

Purpose of the Study:

  • To investigate the mechanical and electronic properties of monolayer P2/m bismuthene using first-principles calculations.
  • To explore the effects of uniaxial strain on the material's anisotropy and band gap.
  • To assess the potential of P2/m bismuthene for flexible optoelectronic applications.

Main Methods:

  • First-principles density functional theory (DFT) calculations.
  • Simulation of uniaxial strain along armchair (X) and zigzag (Y) directions.
  • Analysis of mechanical anisotropy (Poisson's ratio) and electronic band structure.

Main Results:

  • Monolayer P2/m bismuthene displays significant mechanical anisotropy with distinct Poisson's ratios (0.737 for X, 0.056 for Y).
  • Uniaxial strain tunes the electronic band gap from 0.12 to 0.39 eV.
  • A reversible, strain-induced transition from indirect- to direct-band-gap semiconductor is observed.

Conclusions:

  • P2/m bismuthene is a rare 2D material with coupled anisotropic mechanical and tunable electronic properties.
  • Its unique characteristics make it a promising candidate for flexible optoelectronic devices.
  • Theoretical insights guide future experimental synthesis and application of P2/m bismuthene.