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Updated: May 22, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Quantum confinement dominates band gaps while defects lead the photoluminescence in silicon nanowires

Aarti Diwan1, Tharun J1, Chandeep Ec1

  • 1Optics and Nanoelectronics Laboratory (ONE), Department of Physics and Nanotechnology, College of Engineering and Technology, SRM Institute of Science and Technology Kattankulathur Tamil Nadu 603203 India shailens@srmist.edu.in.

RSC Advances
|May 21, 2026
PubMed

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