Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Third Law of Thermodynamics02:38

Third Law of Thermodynamics

A pure, perfectly crystalline solid possessing no kinetic energy (that is, at a temperature of absolute zero, 0 K) may be described by a single microstate, as its purity, perfect crystallinity,and complete lack of motion means there is but one possible location for each identical atom or molecule comprising the crystal (W = 1). According to the Boltzmann equation, the entropy of this system is zero.
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Thermal Strain01:19

Thermal Strain

Thermal strain is a concept that arises when we consider how temperature changes affect structures. Unlike the conventional assumption that structures remain constant under load, real-world scenarios often involve temperature fluctuations that can significantly impact these structures. Consider a homogeneous rod with a uniform cross-section resting freely on a flat horizontal surface. If the rod's temperature increases, the rod elongates. This elongation is proportional to the temperature...
Thermal expansion and Thermal stress: Problem Solving01:27

Thermal expansion and Thermal stress: Problem Solving

San Francisco's Golden Gate Bridge is exposed to temperatures ranging from -15 °C to 40 °C. At its coldest, the main span of the bridge is 1275 m long. Assuming that the bridge is made entirely of steel, what is the change in its length between these temperatures?
To solve the problem, first, identify the known and unknown quantities. The initial length (L) of the bridge is 1275 m, the coefficient of linear expansion (α) for steel is 12 x 10-6/°C, and the change in temperature (ΔT) is 55 °C.
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Analytical Ultracentrifugation for Biopharmaceutical Characterization and Quality Control.

International journal of molecular sciences·2026
Same author

FLOT1 and EEF1D: ac4C-related genes bridging Alzheimer's disease and sleep deprivation.

Frontiers in aging neuroscience·2026
Same author

Empagliflozin-pretreated mesenchymal stem cell-derived extracellular vesicles facilitate cardiac repair via AGGF1.

Journal of nanobiotechnology·2026
Same author

Age-dependent epigenetic control of flavonoid metabolism underlies chemical defenses in ancient Ginkgo biloba.

The Plant cell·2026
Same author

Comparative analysis of hyaluronic acid fillers: Juvéderm Volux versus MaiLi Extreme in microstructural, rheological and mechanical properties.

JPRAS open·2026
Same author

PpERF27-PpCBF2/4 Module Integrates Low-Temperature and Ethylene Signals to Activate Abscisic Acid and DAM Pathways to Promote Bud Endodormancy in Peach.

Plant, cell & environment·2026

Related Experiment Video

Updated: May 22, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

Negative and Zero Thermal Expansion in High-Entropy NASICON Structure Oxide Material.

Mengdi Xu1,2, Kaiyue Zhao1, Yongqiang Qiao1

  • 1School of Physics, Zhengzhou University, Zhengzhou, China.

Small (Weinheim an Der Bergstrasse, Germany)
|May 21, 2026
PubMed
Summary

This study introduces a novel high-entropy material exhibiting zero thermal expansion (ZTE) and negative thermal expansion (NTE) properties. This discovery offers enhanced stability for precision components in industrial applications.

Keywords:
NASICONhigh‐entropynegative thermal expansionzero thermal expansion

More Related Videos

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Related Experiment Videos

Last Updated: May 22, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain
08:00

Chemical Synthesis of Porous Barium Titanate Thin Film and Thermal Stabilization of Ferroelectric Phase by Porosity-Induced Strain

Published on: March 27, 2018

Writing and Low-Temperature Characterization of Oxide Nanostructures
06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

Area of Science:

  • Materials Science
  • Solid State Chemistry

Background:

  • Zero thermal expansion (ZTE) materials are crucial for precision components, enhancing stability and lifespan.
  • Developing materials with tunable thermal expansion is vital for advanced technological applications.

Purpose of the Study:

  • To design and synthesize a novel high-entropy material with anomalous thermal expansion properties.
  • To investigate the mechanisms behind negative thermal expansion (NTE) and ZTE in the designed material.

Main Methods:

  • High-entropy synthesis strategy applied to create KMg1/3Mn1/3Co1/3Sc1/2In1/2Mo3O12 with a NASICON structure.
  • Characterization of thermal expansion behavior using temperature-dependent measurements.
  • Analysis of crystal structure and vibrational dynamics using temperature-dependent Raman spectroscopy.

Main Results:

  • The synthesized material KMg1/3Mn1/3Co1/3Sc1/2In1/2Mo3O12 exhibits volumetric negative thermal expansion (NTE) below 300 K (αV = -9.97×10⁻⁶ K⁻¹).
  • Achieved near-zero thermal expansion (ZTE) between 300-700 K (αV = 1.56×10⁻⁶ K⁻¹).
  • Anisotropic oxygen atom vibrations driving polyhedral rotation were identified as the origin of NTE.

Conclusions:

  • Anomalous thermal expansion arises from the interplay between polyhedral bending vibrations and K⁺ ion vibrations.
  • Polyhedral coupled rotation is confirmed as a key factor in the material's anomalous thermal expansion.
  • The high-entropy strategy provides a viable route for designing NTE and ZTE materials.