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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

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Related Experiment Video

Updated: May 23, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

High-Performance Top-Gate and Dual-Gate p-Type SnO Thin-Film Transistors Compatible with 350 °C Back-End-of-Line

Jialong Song1, Yiwen Yao1, Chaoran Dong1

  • 1School of Integrated Circuits, Shandong University, Jinan, Shandong Province 250100, China.

ACS Applied Materials & Interfaces
|May 22, 2026
PubMed
Summary
This summary is machine-generated.

High-performance tin oxide (SnO) thin-film transistors (TFTs) were developed for 3D electronics. These thermally robust p-type SnO TFTs are compatible with back-end-of-line processing, enabling advanced integrated circuits.

Keywords:
350 °C back-end-of-line processesdual-gatep-type SnOthin-film transistorstop-gate

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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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Last Updated: May 23, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

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Published on: August 29, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electronics Engineering

Background:

  • Integrating p-type oxide semiconductors into 3D architectures is hindered by material limitations and thermal instability.
  • Existing tin oxide (SnO) thin-film transistors (TFTs) face challenges with ambipolar conduction and high-temperature processing, limiting their use in back-end-of-line (BEOL) applications.

Purpose of the Study:

  • To develop high-performance, thermally robust p-type SnO TFTs suitable for monolithic 3D integrated circuits.
  • To overcome the limitations of SnO TFTs in top-gate and dual-gate configurations for BEOL compatibility.

Main Methods:

  • Fabrication of polycrystalline SnO films using atomic layer deposition (ALD).
  • Development of top-gate and vertically symmetric dual-gate SnO TFT architectures.
  • Investigation of device performance after annealing at 350 °C using tungsten (W) electrodes.

Main Results:

  • ALD-grown SnO exhibited intrinsic p-type conductivity, achieving on/off ratios up to 10^5 in top-gate TFTs.
  • Dual-gate TFTs demonstrated on/off ratios exceeding 10^6 and a peak field-effect mobility of 4 cm²/V·s.
  • Tungsten electrodes preserved p-type conduction after 350 °C annealing, and top-gate operation suppressed electron current by over 3 orders of magnitude.

Conclusions:

  • Demonstrated a viable platform for thermally robust p-type SnO TFTs compatible with BEOL processing.
  • Established high-performance top-gate and dual-gate SnO TFTs suitable for monolithic 3D oxide electronics.
  • The developed SnO TFTs show stable operation, good reproducibility, and potential for advanced integrated circuit applications.