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Related Concept Videos

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Fermi Level01:18

Fermi Level

The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Energy Bands in Solids01:01

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

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Related Experiment Video

Updated: May 26, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Radiative Electronic Bound States in the Continuum from Defects in Semiconductors.

Seong Yun Hong1, Liang Z Tan2, Ki Hoon Lee3

  • 1Department of Intelligent Semiconductor Engineering, Incheon National University, Incheon 22012, Republic of Korea.

Nano Letters
|May 25, 2026
PubMed
Summary
This summary is machine-generated.

Defect states in semiconductors can be optically active, hosting radiative electronic bound states in the continuum (BICs). This finding enables new defect-based optical systems, including quantum emitters and qubits.

Keywords:
bound states in the continuumdensity functional theoryquantum applicationquantum defectsilicon G center

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Area of Science:

  • Solid-state physics
  • Quantum optics
  • Materials science

Background:

  • Continuum-buried defect states in semiconductors are typically optically inactive due to strong coupling to continuum bands.
  • Understanding defect states is crucial for developing advanced semiconductor devices.

Purpose of the Study:

  • To demonstrate that continuum-buried defect states can host radiative electronic bound states in the continuum (BICs).
  • To investigate the silicon G center as a model system for this phenomenon.
  • To establish BICs as a paradigm for defect-based optical systems.

Main Methods:

  • Hybrid functional first-principles calculations with Hubbard U correction.
  • Analysis of defect state energy-level reordering under optical excitation.
  • Computation of temperature-dependent nonradiative lifetimes and comparison with experimental photoluminescence (PL) lifetimes.

Main Results:

  • A localized defect state, initially below the valence band maximum (VBM), shifts above VBM upon optical excitation due to exchange-driven energy-level reordering.
  • This transition suppresses nonradiative decay, enabling robust radiative emission.
  • Calculated nonradiative lifetimes quantitatively reproduce experimental PL lifetimes across temperatures.

Conclusions:

  • Continuum-embedded defect states can be stabilized and become optically active.
  • Electronic BICs offer a general mechanism for designing efficient defect-based optical systems.
  • This research opens avenues for novel quantum emitters and qubits.