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Phase Transitions: Vaporization and Condensation02:39

Phase Transitions: Vaporization and Condensation

The physical form of a substance changes on changing its temperature. For example, raising the temperature of a liquid causes the liquid to vaporize (convert into vapor). The process is called vaporization—a surface phenomenon. Vaporization occurs when the thermal motion of the molecules overcome the intermolecular forces, and the molecules (at the surface) escape into the gaseous state. When a liquid vaporizes in a closed container, gas molecules cannot escape. As these gas phase molecules...

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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Published on: May 23, 2018

Defect-Engineered VO2 Films: From Abrupt Phase Transition to Continuous Infrared Modulation via High-Vacuum

Lin Liu1, Jinxiao Li1, Lei Wu1

  • 1School of Physics and Astronomy, Beijing Normal University, Beijing 100875, China.

Nanomaterials (Basel, Switzerland)
|May 26, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a dopant-free annealing method to control vanadium dioxide (VO2) films by engineering oxygen vacancies. This technique enables tunable electrical and infrared properties for advanced devices without complex processing.

Keywords:
VO2 filmsdefect engineeringhigh-vacuum annealinginfrared emissivitymetal–insulator transition

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Area of Science:

  • Materials Science
  • Condensed Matter Physics

Background:

  • Vanadium dioxide (VO2) exhibits a metal-insulator transition (MIT) crucial for applications like smart windows and sensors.
  • Conventional tuning methods (doping, heterostructures) face challenges like complex processing and poor uniformity.

Purpose of the Study:

  • To investigate a dopant-free, high-vacuum annealing strategy for VO2 films.
  • To regulate VO2's structural evolution via oxygen-vacancy engineering.
  • To clarify the impact of oxygen vacancies on electrical switching and infrared emissivity.

Main Methods:

  • High-vacuum annealing of VO2 films at varying temperatures (9 × 10⁻⁴ Pa).
  • Oxygen-vacancy engineering through controlled annealing.
  • Analysis of structural evolution, electrical MIT, and infrared emissivity.

Main Results:

  • Annealing induced oxygen vacancies, converting V⁴⁺ to V³⁺ and causing distinct structural stages.
  • Electrical MIT temperature decreased with annealing, but switching ratio collapsed at a critical point.
  • Infrared emissivity transitioned from abrupt switching to continuous modulation, starting earlier than electrical MIT collapse.

Conclusions:

  • Oxygen-vacancy engineering via high-vacuum annealing offers a scalable, impurity-free method to tune VO2 properties.
  • This approach allows for reconfigurable electrical and infrared responses in VO2 devices.
  • The study reveals the interplay between oxygen vacancies, structural stability, and device performance.