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Updated: May 28, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Channel and Body-Diode Conduction Characteristics in 4H-SiC MOSFETs Under Third-Quadrant Switching Conditions

Xiaobing Huang1, Yihui Song2, Chiyu Zhong2

  • 1School of Information Science and Technology, Southwest Jiaotong University (SWJTU), Chengdu 611756, China.

Micromachines
|May 27, 2026
PubMed

Keywords:
SiC MOSFETreverse conductionreverse recovery characteristicsthird-quadrant operation

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