Related Experiment Video

Updated: May 28, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Strong Lateral Mode Confinement by Embedding SiO2 Nanospheres in the DBRs of GaN-Based VCSELs

Huanqing Chen1, Menglai Lei1, Linghai Meng2

  • 1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.

Micromachines
|May 27, 2026
PubMed

Keywords:
GaN-based VCSELSiO2 nanospherescurved DBRlateral confinement

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