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Published on: June 3, 2015
Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology.
Qidong Li1, Yuxin Zhang1, Baoqiang Huang1
1School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, China.
Micromachines
|May 27, 2026
Summary
This study introduces an adaptive gate driver chip to mitigate voltage and current overshoot in Silicon Carbide (SiC) MOSFETs, improving power conversion efficiency and performance.
Area of Science:
- Power Electronics
- Semiconductor Devices
- Materials Science
Background:
- Silicon carbide (SiC) MOSFETs offer high efficiency and power density but suffer from overshoot and oscillations during high-speed switching.
- Parasitic parameters in SiC MOSFETs lead to electromagnetic interference and performance degradation.
Purpose of the Study:
- To analyze the mechanisms of current overshoot during turn-on and voltage overshoot during turn-off in SiC MOSFETs.
- To present an adaptive active gate driver chip for suppressing overshoot and reducing switching loss.
Main Methods:
- Developed a three-stage driving current control strategy for adaptive gate driving.
- Implemented cross-cycle switching point regulation using Miller plateau tracking for turn-on.
- Utilized peak sampling of drain-source voltage for turn-off control.
- Fabricated the gate driver chip using a 180 nm BCD process.
Main Results:
- The proposed gate driver effectively suppresses current overshoot during turn-on and voltage overshoot during turn-off.
- Reduced turn-on loss by 35.1% and turn-off loss by 33.2% compared to conventional passive drivers.
- Demonstrated adaptive control under varying operating conditions.
Conclusions:
- The adaptive active gate driver chip significantly improves SiC MOSFET switching performance.
- The proposed chip offers a practical solution for reducing switching losses and enhancing power conversion efficiency.
- Mitigates electromagnetic interference caused by switching transients.
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