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Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
Published on: February 4, 2018
A Low-Offset Sense Amplifier with Self-Adaptive Calibration and Dynamic Body-Biased Mitigation Technology for
Yulan Liu1,2, Yibo Hu1, Han Xiao1,2
1State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
None:
Offset voltage (VOS) is a critical parameter of sense amplifiers (SAs), determining both the read reliability and performance of SRAM. This paper proposes SC-DISBSA, a low-VOS SA that combines self-adaptive calibration with dynamic body bias technology. Based on the linear relationship between the transfer gate voltage and VOS, a three-step self-adaptive calibration algorithm is established. Supported by the calibration control circuit, this approach quantitatively calibrates circuit mismatch while dynamic body bias further suppresses remaining variations. Under a 28 nm CMOS process, the VOS standard deviation (σOS) of SC-DISBSA remains below 3.1 mV across a 0.7 V to 1.1 V supply range, representing reductions of 49.9% and 69.3% compared to the voltage-latch SA (VLSA) and current-latch SA (CLSA), respectively. At a typical case (TT/0.9 V/27 °C) with a BL differential (ΔVBL) of 6σOS, SC-DISBSA reduces the required bitline discharge delay by 51.7% and improves average read sensing power by 24.9% compared to VLSA. By adopting an non-conventional bitline power supply strategy, SC-DISBSA decreases worst case (FF/1.1 V/125 °C) static power by 36.8% relative to VLSA. Additionally, it reduces gate area by 18.9%. Overall, SC-DISBSA effectively optimizes SRAM read latency and power efficiency.
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