Chemical Modification Mechanism of SiC Substrates in Electrical Discharge Machining

Electrical discharge machining (EDM) is an efficient method for processing silicon carbide (SiC) substrates. However, the chemical modification mechanism of SiC substrates in the EDM process remains not fully elucidated. To clarify the material removal mechanism of SiC substrates in EDM, this study investigated the behaviors of SiC substrates under different discharge conditions through experimental analysis and interface temperature field simulation. Results indicate that the SiC substrates sequentially exhibit characteristic morphologies of surface oxidation, thermal decomposition, and fracture as discharge energy increases. A discolored layer composed of amorphous SiO₂ is formed on the SiC surface in low-discharge energy. Crystalline silicon and graphitic carbon are generated from the thermal decomposition of SiC substrates in high-discharge energy. Excessively high discharge energy induces the breakdown of SiC substrates. A critical temperature threshold is identified that delineates the initiation of prominent thermal oxidation on the SiC surface. Temperature field simulations further reveal the correlation between EDM parameters and interfacial temperature variations, along with the mechanisms of material removal driven by thermal diffusion. This study deepens the fundamental understanding of the EDM removal mechanism of SiC substrates and is expected to provide a scientific basis for the efficient material removal of SiC substrates.