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High-Precision Localization Algorithm for Target Symmetry Center in Image-Based Overlay Metrology.

Wuhao Liu^1,2, Maoxin Song², Shuming Shi²

¹School of Environmental Science and Optoelectronic Technology, University of Science and Technology of China, Hefei 230026, China.

|May 27, 2026

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This summary is machine-generated.

This study introduces a new method for precise image-based overlay (IBO) target localization in semiconductor manufacturing. The novel symmetry center matching algorithm achieves sub-pixel accuracy and high throughput, crucial for advanced chip production.

Area of Science:

Semiconductor Manufacturing
Metrology
Optical Engineering

Background:

High-precision overlay target localization is essential for advanced semiconductor manufacturing.
Image-based overlay (IBO) metrology requires accurate center localization for effective process control.

Purpose of the Study:

To develop a novel algorithm for high-precision IBO target center localization.
To improve accuracy and repeatability in overlay metrology for advanced semiconductor nodes.

Main Methods:

A novel algorithm based on symmetry center matching is proposed.
The method reformulates center localization as a global correlation optimization problem.
It uses grayscale projection profiles, spatial mirroring, and Pearson correlation coefficient for matching.

Keywords:

center localization correlation overlay metrology

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Main Results:

Achieved center localization accuracy better than 0.00013 pixels (3σ) in simulations.
Demonstrated object-space repeatability precision of 0.129 nm (X) and 0.144 nm (Y) (3σ).
Average single-frame processing time is approximately 0.07 seconds, ensuring high throughput.

Conclusions:

The proposed symmetry center matching algorithm meets the stringent precision and throughput demands of advanced semiconductor manufacturing.
The algorithm surpasses the 0.32 nm measurement uncertainty requirement for advanced process nodes.
This method offers a viable solution for critical overlay metrology applications.