High-Precision LCCD-Based Focus Metrology for I-Line Lithography: Multi-Sample Repeatability and Adaptability...

Achieving stable local focus-height measurement across different material surfaces is important for I-line-lithography-related inspection, where sub-micrometer height deviations can affect imaging quality, exposure uniformity, and subsequent autofocus performance. This study evaluates the local focus-height repeatability of a linear charge-coupled device (LCCD)-based focus metrology system under several I-line-lithography-related material-surface conditions. The prototype integrates fiber-coupled LED illumination, telecentric projection and imaging optics, reference marks, and a two-step localization procedure based on template matching and centroid estimation; the dual-wavelength source is treated as part of the fixed optical configuration. Tests were performed on silicon wafers, GaAs bright substrates, sapphire, infrared transmissive material, and SiC, covering different reflectivity levels and surface structures. The measured peak-to-valley repeatability was 35-37 nm for highly reflective samples and 40-54 nm for intermediate- or low-reflectivity and microstructured samples, all below the selected 70 nm conservative engineering criterion derived from the depth-of-focus estimate. These results indicate that the integrated LCCD measurement chain maintained stable local repeatability within the tested material-surface range, providing experimental support for further development of local focus metrology and precision optical inspection.