Simulations of Novel Semi-Spherical Electrode Detectors Formed by Simultaneously Deep-Etched Trenches

A novel 3D detector with a semi-spherical electrode detector structure is proposed in this study. The semi-spherical electrode is formed by concentric deep circular-type trenches of varying depths. These concentric trenches can be simultaneously deep-etched using DRIE (Deep Reactive-Ion Etching) depths obtained from our calculations for a certain time at a given aspect ratio. The focus of this work is the conceptualization, design considerations, 3D modeling, and electrical simulation of the proposed 3D detector. The detector's electrical properties, including electric potential distribution, electric field distribution, electron concentration distribution, full depletion voltage, leakage current, and capacitance, were simulated using a technology computer-aided design (TCAD) tool. Simulation and analysis of the detector's performance post-irradiation were also conducted. The small capacitance of our semi-spherical electrode detector renders it highly suitable for applications in photon sciences (e.g., X-ray).