Ultrasensitive Hydrogen Detection Using GNRFET Sensor: Multimetric Optimization via Geometry, Temperature, and Oxygen...

This work presents a comprehensive analysis of a Palladium (Pd)-gated graphene nanoribbon field-effect transistor (GNRFET) as a high-sensitivity potential hydrogen sensor under idealized conditions, focusing on the structural and environmental control of multimetric sensitivity. Hydrogen adsorption is modeled through pressure-dependent work-function modulation and interface coverage, including competition with oxygen. For hydrogen gas at a pressure of PH2=10-6 Torr without O₂, the sensor exhibits a maximum threshold voltage sensitivity of about 300 mV, which is reduced to roughly 40 mV under an oxygen partial pressure of 152 Torr, quantifying the impact of background gas on response. Band diagrams, transmission spectra, local density of states, and transfer characteristics are examined over wide ranges of H₂ pressure, temperature, gate length, and nanoribbon width. Sensitivity is evaluated using drain current change, threshold voltage shift, and average subthreshold swing variation. Results showed that the sensitivity based on current is high for ultralow hydrogen pressures, whereas it is low in higher levels of pressure compared to the sensitivity based on subthreshold. Also, uncertainty analysis revealed that the threshold voltage metric remains largely geometry-independent and thus tolerant to fabrication variations.