Highly Sensitive SOI-TFET Gas Sensor Utilizing Tailored Conducting Polymers for Selective Molecular Detection and...

We present a highly sensitive and selective gas sensor based on an advanced silicon-on-insulator tunnel field-effect transistor (SOI-TFET) architecture, enhanced through the integration of customized conducting polymers. In this design, traditional metal gates are replaced with distinct functional polymers-PPP-TOS/AcCN, PP-TOS/AcCN, PP-FE(CN)₆^3-/H₂O, PPP-TCNQ-TOS/AcCN, and PPP-ClO₄/AcCN-which enable precise molecular recognition and discrimination of various target gases. To further enhance sensitivity, the device employs an oppositely doped source region, significantly improving gate control and promoting stronger band-to-band tunneling. This structural modification amplifies sensing signals and improves noise immunity, allowing reliable detection at trace concentrations. Additionally, optimization of the subthreshold swing contributes to faster switching and response times. Thermal stability is addressed by embedding a P-type buffer layer within the buried oxide, which increases thermal conductivity and reduces lattice temperature, further stabilizing device performance. Experimental results demonstrate that the proposed sensor outperforms conventional SOI-TFET designs, exhibiting superior sensitivity and selectivity toward analytes such as methanol, chloroform, isopropanol, and hexane. Beyond gas sensing, the unique polymer-functionalized gate design enables integration of microbial biosensing capabilities, making the platform highly versatile for biochemical detection. This work offers a promising pathway toward ultra-sensitive, low-power sensing technologies for environmental monitoring, industrial safety, and medical diagnostics.