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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Two-dimensional digital-analog multimode circuits based on asymmetric vertical double-gate WSe2 transistors
Weijia Tian1,2, Xiaofu Wei1,2, Hang Zhao1,2
1Academy for Advanced Interdisciplinary Science and Technology, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, P. R. China.
Abstract:
Digital-analog multimode operation constitutes a critical enabling technology for next-generation integrated circuits, delivering the performance and multifunctionality necessary to fulfill dynamic system requirements. However, implementing such operation in a single circuit faces a substantial challenge, owing to the fundamentally distinct requirements on carrier transport behavior of transistors. Here, we report an asymmetric vertical double-gate (AVDG) device architecture designed to achieve digital-analog multimode operation. Specifically, the AVDG transistor combines an asymmetric source-drain configuration with dual air-gaps for barrier broadening and metal shielding, allowing the drain-source bias to serve as an additional control terminal. This design enables coordinated modulation of the channel carrier polarity and source-drain injection barriers, allowing the device to be programmed into multiple carrier-transport states. These diverse field-effect characteristics enable the realization of reconfigurable multifunctional logic and analog operations with the combined programming of dual-gate voltages and drain-source bias. With a same circuit unit composed of two AVDG transistors, we demonstrate seven digital logic functions and six analog signal-processing functions. These functions exhibit a good rail to rail logic operation, which suggests that the units could be cascaded to create complex circuits.
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