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Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications
Ellapu Bhanu Prakash1, Ashok Ray2, Sushanta Bordoloi3,4
1Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Chaltlang, Aizawl, Mizoram, 796012, India.
Scientific Reports
|May 29, 2026
Summary
Strain engineering in germanium-source double-gate tunnel field-effect transistors (Ge-DG-TFETs) using Si/SiGe/Si channels significantly boosts performance. This optimization enhances both direct current (DC) and radio frequency (RF) characteristics for low-power terahertz applications.
Area of Science:
- Semiconductor device physics and engineering
- Materials science for electronic applications
- Advanced transistor technology
Background:
- Germanium-source double-gate tunnel field-effect transistors (Ge-DG-TFETs) are promising for low-power electronics.
- Strain engineering is a key technique to enhance semiconductor device performance.
- Si/SiGe/Si heterostructures offer tunable strain for improved electronic properties.
Purpose of the Study:
- To investigate the impact of strain engineering on Ge-DG-TFET performance.
- To analyze the effect of varying germanium mole fraction on device characteristics.
- To evaluate the DC, AC/RF, and linearity improvements in strained Ge-DG-TFETs.
Main Methods:
- Comparative analysis of conventional Si-channel vs. strained Si/SiGe/Si channel Ge-DG-TFETs.
- Systematic variation of germanium composition (SiGe mole fraction) in the heterostructure channel.
- Electrical characterization including ON-state current, threshold voltage, transconductance, and RF performance (cutoff and oscillation frequencies).
Main Results:
- Strained Si/SiGe/Si channels significantly improved ON-state current (from 1.74 to 3.32 mA/µm) and reduced threshold voltage.
- Transconductance increased from 8.22 mS/µm to 11.24 mS/µm with enhanced strain.
- Radio frequency performance saw substantial gains, with cutoff frequency rising to 4.35 THz and maximum oscillation frequency to 0.54 MHz.
Conclusions:
- Strain-engineered Si/SiGe/Si channels effectively enhance DC, AC/RF, and linearity performance in Ge-DG-TFETs.
- Optimized strain in the channel is crucial for achieving superior device characteristics.
- These enhanced Ge-DG-TFETs are well-suited for next-generation low-power and terahertz frequency applications.
Keywords:
Carrier mobilityGe-DG-TFETON-state currentStrain engineeringStrained channelTerahertz frequencyMore Related Videos
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