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Strain-Engineered Method for Atomically Sharp Interfaces in 2D TMDC Lateral Heterostructures.

Mariam Hakami¹, Jui-Cheng Kao^2,3, Vincent Tung¹

¹Department of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo, Japan.

|May 30, 2026

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This summary is machine-generated.

Tensile strain in tungsten diselenide (WSe2) precisely controls interface sharpness during molybdenum disulfide (MoS2) growth. This strain engineering enables the scalable fabrication of sharp interfaces in 2D lateral heterostructures.

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional transition-metal dichalcogenides (TMDCs) properties are tunable via strain.
Controlling chalcogen exchange and alloy formation at lateral heterostructure (LHS) interfaces is crucial but underexplored.
Precise interface control is vital for advanced electronic and optoelectronic devices.

Purpose of the Study:

To investigate the role of tensile strain in monolayer WSe2 for controlling interface sharpness during MoS2 growth.
To explore strain's effect on chalcogen exchange and alloy formation in TMDC LHSs.
To establish a strain-engineering strategy for fabricating precise 2D LHSs.

Main Methods:

Two-step chemical vapor deposition (CVD) on Al2O3 (0001).

Keywords:

alloy atomic–sharp interfaces intermediate species lateral heterostructure strain

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Density functional theory (DFT) calculations to analyze strain effects on atomic energetics.

High-resolution scanning transmission electron microscopy (HR-STEM) for atomic interface characterization.

Main Results:

Highly tensile-strained WSe2 suppresses chalcogen intermixing, leading to sharp interfaces.
Strain-relaxed WSe2 promotes alloy-mediated interfacial evolution.
DFT confirms strain's influence on vacancy formation, substitutional energetics, and alloy stability.

Conclusions:

Tensile strain is a key parameter for controlling lateral interface formation in TMDC heterostructures.
Strain engineering offers a generalizable strategy for scalable fabrication of precise 2D LHSs.
This approach facilitates the development of next-generation electronic and optoelectronic applications.