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Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Modes of Operations of BJT01:21

Modes of Operations of BJT

A Bipolar Junction Transistor (BJT) is a versatile component in electronics, functioning in four distinct modes based on the biasing of its junctions: active, saturation, cut-off, and inverted modes.
Active Mode: The most common mode for amplification, the active mode features a forward-biased emitter-base junction and a reverse-biased base-collector junction. This setup enables electrons to be injected from the emitter to the base while blocking the majority carriers at the collector. The...
Cut-off Frequency of BJT01:17

Cut-off Frequency of BJT

Cut-off frequencies in Bipolar Junction Transistors (BJTs) mark the transition between the signal's pass band and stop band, influencing their performance in amplifying or attenuating frequencies. These frequencies are crucial for designing BJTs to meet specific operational requirements in electronic circuits.
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

2D transistor goes narrower

Xiao Liu1, Yuan Liu2

  • 1Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, China.

Nature Nanotechnology
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PubMed
Summary

No abstract available in PubMed .

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