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Related Concept Videos

Super-resolution Fluorescence Microscopy01:37

Super-resolution Fluorescence Microscopy

Super-resolution fluorescence microscopy (SRFM) provides a better resolution than conventional fluorescence microscopy by reducing the point spread function (PSF). PSF is the light intensity distribution from a point that causes it to appear blurred. Due to PSF, each fluorescing point appears bigger than its actual size, and it is the PSF interference of nearby fluorophores that causes the blurred image. Various approaches to achieving higher resolution through SRFM have recently been developed.
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Updated: Jun 5, 2026

Picometer-Precision Atomic Position Tracking through Electron Microscopy
15:04

Picometer-Precision Atomic Position Tracking through Electron Microscopy

Published on: July 3, 2021

Imaging thick objects with deep-subangstrom resolution and deep-subpicometer precision.

Wenfeng Yang1,2,3, Haozhi Sha1,2,3, Jizhe Cui1,2,3

  • 1School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.

Science Advances
|June 3, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a new electron microscopy technique to image thicker materials with atomic precision. This breakthrough in ptychography allows for the study of intrinsic properties in materials previously limited by sample thickness.

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Area of Science:

  • Materials Science
  • Physics
  • Chemistry
  • Semiconductor Device Engineering

Background:

  • Size effects significantly influence material properties, necessitating high-resolution analysis of thicker samples.
  • Conventional multislice electron ptychography is limited by sample thickness, hindering the study of bulk material properties.

Purpose of the Study:

  • To overcome the thickness limitations of conventional electron ptychography.
  • To enable high-resolution structural analysis of thicker materials using transmission electron microscopy.

Main Methods:

  • Combined energy filtering with extended local-orbital ptychography (eLOP).
  • Developed a method to retrieve varying aberrations during electron beam scanning.
  • Applied the technique to silicon samples up to 85 nanometers thick.

Main Results:

  • Achieved ptychographic reconstructions for silicon samples approximately three times thicker than the conventional threshold.
  • Obtained an information limit of 18 picometers and atomic position precision of 0.39 picometers.
  • Demonstrated accurate reconstructions by eliminating aberration variations.

Conclusions:

  • The developed eLOP technique significantly expands the achievable sample thickness for high-resolution electron microscopy.
  • Accurate reconstructions of thick objects facilitate the discovery and interpretation of intrinsic structural and physical phenomena in solids.
  • This advancement is crucial for materials science, physics, chemistry, and semiconductor engineering.