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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
g-Factor Theory of Si/SiGe Quantum Dots: Spin-Valley and Giant Renormalization Effects
Benjamin D Woods1, Merritt P Losert1, Robert Joynt1
1University of Wisconsin-Madison, Department of Physics, Madison, Wisconsin 53706, USA.
Abstract:
Understanding the g-factor physics of Si/SiGe quantum dots is crucial for realizing high-quality spin qubits. While previous work has explained some aspects of g-factor physics in idealized geometries, the results do not extend to general cases and they miss several important features. Here, we construct a theory that gives g in terms of readily computable matrix elements, and can be applied to all Si/SiGe heterostructures of current interest. As a concrete example, which currently has no g-factor understanding, we study the so-called wiggle well structure, containing Ge concentration oscillations inside the quantum well. Here we find a significant renormalization of the g factor compared to conventional Si/SiGe quantum wells. We also uncover a giant g-factor suppression of order O(1), which arises due to spin-valley coupling, and occurs at locations of low valley splitting. Our work therefore opens up new avenues for g-factor engineering in Si/SiGe quantum dots.
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