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Updated: Jun 11, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Fermi-level depinning achieved by high-work-function Au1-xSex alloy contacts for high-performance p-type WSe2

Wanying Li1, Yipu Xia2, Yuanhao Kou3

  • 1Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.

Nature Communications
|June 9, 2026
PubMed

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