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Ultra-sensitive label-free bio-detection via dielectric-modulated GOSC-SOI-TFET.

S N Vittal Kollapudi¹, Manish Kumar Singh²

¹School of Electronics Engineering, VIT-AP University, Inavolu, Guntur D.t., Andhra Pradesh, 522241, India.

Scientific Reports

|June 9, 2026

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This study introduces a novel biosensor using a Gate-Over-Source-Channel Silicon-on-Insulator Tunnel Field-Effect Transistor (GOSC-SOI-TFET) for highly sensitive, label-free detection. The design achieves superior performance for biomolecule sensing applications.

Area of Science:

Semiconductor device physics
Biosensor technology
Nanotechnology

Background:

Label-free biosensors are crucial for real-time biomolecule detection.
Tunnel Field-Effect Transistors (TFETs) offer low-power operation but require design optimization for sensitivity.
Silicon-on-Insulator (SOI) technology enables advanced transistor structures.

Purpose of the Study:

To propose and investigate a novel dielectric-modulated biosensor based on a Gate-Over-Source-Channel SOI Tunnel Field-Effect Transistor (GOSC-SOI-TFET).
To enhance electrostatic control and band-to-band tunneling efficiency through an asymmetric gate and nanocavity design.
To evaluate the sensor's performance for label-free detection of neutral and charged biomolecules, considering non-ideal factors.

Main Methods:

Keywords:

Biomedical sensing GOSC-SOI-TFET Label-free detection Nanocavity Non-ideal hybridization Steric hindrance

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Utilized a TCAD-based simulation framework incorporating non-local Band-to-Band Tunneling (BTBT) and trap-assisted tunneling models.
Simulated device response to neutral and charged biomolecules, including steric hindrance and probe dispersion effects.
Analyzed ON-current sensitivity and operational characteristics at varying drain voltages.

Main Results:

Demonstrated that biomolecule location significantly impacts sensor sensitivity, with optimal performance near the source-channel junction.
Achieved a high ON-current sensitivity of [Formula: see text] for gelatin biomolecules.
The proposed GOSC-SOI-TFET biosensor exhibited approximately [Formula: see text] higher sensitivity than conventional TFET biosensors at a 30% lower drain voltage ([Formula: see text]).

Conclusions:

The novel GOSC-SOI-TFET biosensor design offers significantly enhanced sensitivity and efficiency for label-free biomolecule detection.
The strategic placement of a nanocavity near the gate-source interface is key to improved performance.
This technology holds promise for developing low-power, high-performance biomedical sensing devices.