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Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

Small-signal Diode Model

Small-signal Diode Model

In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...

Small-Signal Analysis of MOSFET Amplifiers

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...

MOSFET Amplifiers

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Related Experiment Video

Updated: Jun 11, 2026

A Guide to Structured Illumination TIRF Microscopy at High Speed with Multiple Colors

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Optoelectronic co-simulation model for a 3D integrated structure with TSVs based on a micro-ring modulator and

Dehua Dai, Shuxiao Wang, Yunfei Zhang

|June 10, 2026

Summary

This study introduces a new simulation framework for 3D optoelectronic systems. It models micro-ring modulators with through-silicon vias, revealing how heat impacts high-speed performance.

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Published on: September 1, 2022

Area of Science:

Optoelectronics
Integrated Photonics
Semiconductor Device Physics

Background:

3D optoelectronic integration using micro-ring modulators (MRMs) is key for co-packaged optics (CPO) and optical input/output (OIO) systems.
Through-silicon vias (TSVs) are crucial for vertical interconnects but introduce signal integrity and thermal challenges impacting high-speed performance.

Purpose of the Study:

To develop a multi-physics co-simulation framework for MRM-based 3D optoelectronic systems with integrated TSVs.
To analyze the electrical-thermal coupling effects of TSVs on system performance.

Main Methods:

Developed a simulation workflow linking electrical-thermal TSV models with driver electrical models and MRM optical models.
Constructed an equivalent circuit model for electro-optical co-simulation by fitting MRM optical transmission spectra and extracting small-signal parameters.
Performed high-frequency transmission simulations on the integrated 3D optoelectronic system.

Main Results:

Successfully implemented an optoelectronic co-simulation framework incorporating electrical-thermal coupling effects.
Analyzed the impact of driver self-heating on the performance of the 3D optoelectronic system.
Demonstrated the critical role of thermal effects from TSVs in high-speed channel performance.

Conclusions:

Accurate multi-physics modeling is essential for guiding the design and simulation of advanced optoelectronic systems.
The proposed framework enables comprehensive analysis of integrated optoelectronic devices, considering crucial physical interactions.
Understanding and mitigating thermal effects in TSVs are vital for optimizing high-speed optoelectronic performance.