InP-based, strain-free SESAMs with iron-doped InGaAs bulk absorber for ultrafast solid-state glass lasers at 1.55 µm

Ultrafast solid-state glass lasers are frequently mode-locked using a semiconductor saturable absorber mirror (SESAM), which can provide reliable laser self-start and stable mode-locked operation. However, state-of-the-art GaAs-based SESAMs for the 1.55 µm wavelength range require highly strained InGaAs quantum well absorbers with a lattice-mismatch of ≥ 2% relative to the GaAs substrate, which leads to defect formation, reduced damage threshold, and limited design freedom. Here, we present the first fully strain-free SESAMs for solid-state glass lasers at 1.55 µm wavelength, which overcome these constraints. Our devices are grown on InP with a very low residual lattice-mismatch of < 0.1% and incorporate an iron-doped InGaAs bulk absorber. This enables continuous tunability of the SESAM modulation depth and precise control over the ultrafast SESAM recovery time - an unprecedented degree of design freedom. Furthermore, the SESAM structure combines an anti-resonant design with a highly reflective InAlAs/InGaAlAs bottom DBR and a TiO₂/SiO₂ top DBR, which results in record-low non-saturable losses for InP-based SESAMs of 0.6% for a modulation depth of 0.6%. With this approach, we demonstrate the first stable continuous-wave mode-locked operation of a solid-state Er,Yb:glass laser using an InP-based SESAM. We achieve 224 fs pulse duration at a maximum output power of 102.5 mW and a 79.1 MHz repetition rate, in combination with excellent noise properties of 0.005% integrated RIN over [100 Hz, 1 MHz] and 3 fs integrated timing jitter over [1 kHz, 1 MHz].