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Related Experiment Video

Updated: Jun 12, 2026

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

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Published on: May 29, 2018

Configuration-Selective Photocurrent Enhancement Induced by Static Domain Walls in Two-Dimensional Ferroelectric

Ning Xu¹, Yuehua Xu¹

¹School of Wang Zheng Microelectronics, Changzhou University, Changzhou 213164, China.

Nanomaterials (Basel, Switzerland)

|June 11, 2026

Summary

Specific domain wall configurations in 2D ferroelectric indium selenide enhance photocurrent. Unlike defects that typically degrade performance, these domain walls (DWs) can significantly boost optoelectronic transport in devices.

Keywords:

In2Se3 configuration-selective first-principles calculations photocurrent enhancement static domain walls two-dimensional ferroelectric materials

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

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Published on: August 15, 2018

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Domain walls (DWs) are topological defects in 2D ferroelectric materials.
Their impact on optoelectronic transport is not fully understood.
Defects are conventionally thought to degrade device performance.

Purpose of the Study:

To investigate the static role of domain walls in the optoelectronic transport of 2D ferroelectric materials.
To determine if domain walls can enhance or degrade photocurrent.
To explore the configuration selectivity of domain walls in indium selenide.

Main Methods:

First-principles quantum-transport calculations.
Simulations on monolayer ferroelectric Indium Selenide (In2Se3) p-i-n junctions.
Analysis of different domain wall configurations (Initial, Final, Transition states).

Main Results:

Specific static domain wall configurations significantly enhance photocurrent.
The Initial state showed a 1.80x increase compared to single-domain devices.
The Final state increased photocurrent by ~37%, while the Transition state showed lower enhancement.
Photocurrent enhancement is linked to optical absorption, carrier separation, and channel continuity.

Conclusions:

Domain walls in 2D ferroelectrics can enhance, not just degrade, device performance.
The configuration of the domain wall is critical for its effect on photocurrent.
Findings offer a microscopic understanding for optimizing 2D ferroelectric devices using domain walls.