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Updated: Jun 17, 2026
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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Polypyridinophane thin films via CVD for a polymeric dielectric layer on an oxide TFT with an ultrahigh dielectric
Won Kyung Park1, Jae Won Park2, Gunoh Lee1
1Department of Chemical Engineering and Applied Chemistry, College of Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea. kjlee@cnu.ac.kr.
Nanoscale Horizons
|June 16, 2026
Abstract:
High-k polymer gate dielectrics are desirable for oxide thin-film transistors but limited by low capacitance and interfacial instability. Pyridinophane-based polymers with main-chain heteroatoms were processed via a Gorham-type chemical vapor polymerization to form ultrathin, pinhole-free dielectrics with enhanced dielectric properties and reliable oxide transistor performance.
