Related Experiment Video
Updated: Jun 17, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Dimensionality-driven decoupling of electronic-ionic transport in a Cs4PbBr6/CsPbBr3 heterojunction
Hyunmin Lee1, Sangeun Baek1, Jinwoo Choi1
1Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea. youngjkang@hanyang.ac.kr.
None:
Harnessing the interplay between electronic and ionic transport in lead halide perovskites is pivotal for advancing next-generation iontronics. Here, we demonstrate a pronounced disparity in charge transport dynamics enabled by the post-synthetic chemical transformation of a 0D Cs4PbBr6 single crystal surface into a 3D CsPbBr3-rich surface layer via controlled Prussian blue treatment. Temporal response measurements reveal a fundamental divergence in transport behavior: while the pristine 0D crystal exhibits high activation barriers and restricted ionic activity due to its isolated octahedral framework, the chemically transformed CsPbBr3-rich surface layer facilitates facile ion migration through continuous Pb-Br-Pb percolative pathways. Leveraging this structural mismatch, we construct a monolithic Cs4PbBr6/CsPbBr3 heterojunction that exhibits strongly polarity-dependent transient responses, reminiscent of a memristive-diode-like behavior. We elucidate that this polarity-dependent ionic gating arises from asymmetric carrier injection at the heterointerface, where local electron accumulation under reverse bias is proposed to transiently neutralize mobile bromide vacancies (VBr+ + e- ⇄ V0Br), thereby suppressing field-driven ionic migration. These findings provide mechanistic insight into chemically engineered all-inorganic perovskite heterostructures and suggest a materials-level design principle for electronically regulating ionic defect motion in mixed conductors.
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Schottky Barrier Diode
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

