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Updated: Jun 17, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Correlation between band gap and Raman intensity
Sheng-Hai Zhu1, Han Qin2, Xin-Lu Cheng1
1Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China. chengxl@scu.edu.cn.
None:
Raman spectroscopy has become a powerful tool for studying material properties due to its precise identification of structural features. Previous studies have focused more on the qualitative changes indicated by Raman peaks, with little attention paid to the quantitative changes indicated by Raman intensity. Based on the theoretical calculations of Raman spectra and electronic structures of a series of semiconductors under different pressures, and through further statistical analysis, we established a relationship between Raman intensity and band gap in the form of a formula. When Raman intensity increases, it is always accompanied by a decrease in the band gap. These insights provide a broader perspective for the applications of Raman spectroscopy.
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