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Updated: Jun 17, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Unraveling thermal transport mechanisms in monolayer CrSi2N4 using machine-learned potentials
Duohao Zhang1, Xinlu Cheng1, Hong Zhang2
1Institute of atomic and molecular Physics, Sichuan University, Chengdu, China. chengxl@scu.edu.cn.
Abstract:
Efficient heat dissipation is vital for the reliability and performance of next-generation nanoelectronics based on two-dimensional MA2Z4 (M = Mo, W, V, Nb, Ta, Ti, Zr, Hf or Cr, A = Si, Ge, and Z = N, P, As) semiconductors. While their electronic and mechanical properties have been extensively characterized, the microscopic physics governing thermal transport in these complex septuple-atomic-layer structures remains elusive. In this work, we systematically investigate the intrinsic lattice thermal conductivity of monolayer CrSi2N4 by developing machine-learned potentials trained on first-principles data. This framework captures many-body interatomic interactions with quantum-mechanical accuracy, enabling rigorous assessment of phonon dynamics via large-scale molecular and lattice dynamics calculations. We predict a high room-temperature thermal conductivity of approximately 372 W m-1 K-1 for CrSi2N4, positioning it as a promising heat-spreading candidate. Mode-resolved analyses reveal that heat transport is dominated by in-plane acoustic phonons; the flexural modes undergo pronounced anharmonic renormalization, significantly suppressing their contribution to total heat flux. Compared with MoSi2N4, the disparity in thermal conductivity of CrSi2N4 originates from altered lattice anharmonicity and a constricted three-phonon scattering phase space rather than atomic mass effects. These results provide insight into phonon transport in Cr-based MA2Z4 nitrides and demonstrate the effectiveness of machine-learned potentials for predicting thermophysical properties of complex two-dimensional materials.
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