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Imaging Results from a Direct Conversion X-ray Detector with TlBr and CMOS Pixel Array.

J F Christian1, M S Squillante1, M J Breen1

  • 1Radiation Monitoring Devices, Inc., 44 Hunt St, Watertown, MA, 02472, USA.

IEEE Transactions on Nuclear Science
|June 17, 2026
PubMed
Summary
This summary is machine-generated.

This study details the creation and testing of novel X-ray imaging devices using thallium bromide (TlBr) crystals and films. These TlBr detectors demonstrate effective X-ray imaging capabilities and stable performance over time.

Keywords:
TlBratomic-layer depositionbarrier layerhard X-ray imagingintegrating ROICsemiconductor X-ray detector

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Area of Science:

  • Materials Science
  • Medical Imaging Physics
  • Semiconductor Device Physics

Background:

  • X-ray imaging relies on detectors that convert X-ray photons into measurable signals.
  • Thallium bromide (TlBr) is a promising material for X-ray detection due to its high atomic number and resistivity.
  • Advancements in detector fabrication and readout electronics are crucial for improving X-ray imaging resolution and performance.

Purpose of the Study:

  • To fabricate and characterize X-ray imaging devices utilizing single-crystal and polycrystalline thallium bromide (TlBr).
  • To evaluate the electrical properties, stability, and imaging performance of TlBr-based X-ray detectors.
  • To assess the impact of fabrication processes on device longevity and imaging quality.

Main Methods:

  • Fabrication of TlBr imaging devices using single-crystal and polycrystalline films bonded to a CMOS readout chip (Libra-1).
  • Electrical characterization including current-voltage (IV) curves and impedance spectroscopy.
  • Longevity tests measuring X-ray response and leakage current over time.
  • Imaging tests using light-emitting diodes (LED) and X-rays to assess resolution and interface effects.

Main Results:

  • Polycrystalline TlBr film exhibited a resistivity of 3x10^10 Ω-cm.
  • Leakage current and X-ray photocurrent showed significant decrease over five weeks, indicating device stabilization.
  • Both single-crystal and polycrystalline TlBr detectors successfully resolved 0.3-mm holes in a tungsten mask under X-ray irradiation.
  • Interface effects were observable with both LED and X-ray stimuli.

Conclusions:

  • TlBr-based X-ray imaging devices can be fabricated with promising electrical and imaging characteristics.
  • The observed stabilization of leakage current and photocurrent suggests potential for long-term operational stability.
  • These findings provide crucial data for optimizing TlBr detector fabrication and enhancing device longevity for X-ray applications.