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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 19, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
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Solvent-Assisted Heterojunction Interface Passivation via DMSO Modification for High-Efficiency Sb2Se3 Solar Cells.

Xiaoyang Liang1,2, Yixin Sui1, Hualong Xiao1

  • 1National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding, China.

Small (Weinheim an Der Bergstrasse, Germany)
|June 17, 2026
PubMed
Summary
This summary is machine-generated.

Dimethyl sulfoxide (DMSO) annealing passivates defects in antimony selenide (Sb2Se3) photovoltaics. This method enhances heterojunction quality, boosting power conversion efficiency by 17% for promising solar cell development.

Keywords:
DMSO modificationSb2Se3 solar cellsheterojunction interfacesolvent‐assisted passivation

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Area of Science:

  • Materials Science
  • Photovoltaics
  • Semiconductor Physics

Background:

  • Antimony selenide (Sb2Se3) is a promising photovoltaic absorber exceeding 10% power conversion efficiency.
  • Performance is limited by defects in the space charge depletion region near heterojunction interfaces.
  • Effective defect passivation is crucial for advancing Sb2Se3 solar cell technology.

Purpose of the Study:

  • To introduce a solvent-assisted annealing strategy for passivating surface defects in Sb2Se3.
  • To investigate the mechanism of defect mitigation using dimethyl sulfoxide (DMSO).
  • To improve the heterojunction quality and power conversion efficiency of Sb2Se3 photovoltaics.

Main Methods:

  • Solvent-assisted annealing using dimethyl sulfoxide (DMSO).
  • Surface analysis to identify oxide removal and sulfur incorporation.
  • Passivation of selenium vacancy defects (VSe2, VSe3) via sulfur incorporation.
  • Theoretical calculations to understand DMSO chemisorption and Sb-Se lattice interaction.

Main Results:

  • DMSO treatment effectively passivates surface defects by removing oxides and incorporating sulfur.
  • Incorporated sulfur neutralizes surface states and passivates deep-level selenium vacancies.
  • Theoretical calculations confirm strong Sb-S bonding, facilitating controlled surface etching.
  • Achieved a champion power conversion efficiency of 10.48%, a 17% relative improvement over control devices (8.99%).

Conclusions:

  • Solvent-assisted DMSO annealing is a simple and effective method for defect mitigation in Sb2Se3.
  • The strategy significantly improves heterojunction quality and photovoltaic performance.
  • This approach supports the practical application and development of Sb2Se3 photovoltaics.